| PART |
Description |
Maker |
| CHA5390-99F CHA5390 |
24-30GHz Medium Power Amplifier 24 - 30GHz的中等功率放大器
|
United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
|
| CHA5296 CHA529607 |
27-30GHz High Power Amplifier
|
United Monolithic Semiconductors
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| MUX-PO9824 |
7.5-30GHz Frequency Multiplier
|
United Monolithic Semiconductors
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| CHA3689 |
12.5-30GHz Low Noise Amplifier
|
United Monolithic Semiconductors
United Monolithic Semic...
|
| STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包，中功
(STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power
1300 nm Laser in Receptacle Package,Medium Power
1300 nm Laser in Receptacle Package Medium Power
From old datasheet system
1300 nm Laser, Medium Power
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UATM30M2C |
0.04-30GHz Broadband MMIC Low Noise Amplifier
|
Centellax
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RA18H1213G10 |
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
